Resistive Memory in 2T1R Architecture Based on Si MOSFETs and Nanocomposite Memristors

We are grateful for assistance in organizing the project with MPW within the framework of the agreement between Moscow Institute of Physics and Technology (National Research University) no. 075-02-2024-1523 and the Ministry of Science and Higher Education of the Russian Federation, implemented under the terms of the federal project “Training of Personnel and Scientific Foundation for the Electronic Industry.”

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