F. F. Morehead, G. Mandel, Shallow P acceptor levels in CdTe and ZnTe, Physics Letters, 10(1), 5 (1964); https://doi.org/10.1016/0031-9163(64)90542-6.

Е. N. Arkadyeva, Yu. V. Rud, О. А. Маtveev, Behavior of Phosphorus in CdTe, Physics of Solid State, 8(9), 2821 (1966).

R. B. Hall, H. H. Woodbury, Diffusion and solubility of phosphorus in CdTe and CdSe, J. Appl. Phys., 39(12), 5361 (1968); https://doi.org/10.1063/1.1655982.

N. V. Аgrinskaya, О. А. Маtveev, A. I. Terentyev, Non-equivalent state of phosphorus impurity СdTe crystals, Physics and Technology of stmiconductors, 23(3), 439 (1973).

F. A. Selim, F. A. Kröger, The defect structure of phosphorus-doped CdTe, J. Electrochem. Soc., A124, 401 (1977); https://doi.org/10.1149/1.2133312.

M. Chu, R. H. Bube, J. F. Gibbons, Electronic properties of As- and P-implanted cadmium telluride, J. Electrochem. Soc., 127(2), 483 (1980); https://doi.org/10.1149/1.2129691.

E. Molva, K. Saminadayar, J. L. Pautrat, E. Ligeon, Photoluminescence studies in N, P, As implanted cadmium telluride, Solid State Commun., 48(11), 955 (1983); https://doi.org/10.1016/0038-1098(83)90539-2.

A. Alnajjar, C. Watson, A. Brinkman, K. Durose, Post–growth doping of bulk CdTe crystals with phosphorus, J. Cryst. Growth., 117, 385 (1992); https://doi.org/10.1016/0022-0248(92)90780-M.

J.-H. Yang, W.-J. Yin, J.-S. Park, J. Burst, W. K. Metzger, T. Gessert, T. Barnes, S-H. Wei, Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing, J. Appl. Phys., 118, 025102 (2015); https://doi.org/10.1063/1.4926748.

J. M. Burst, S. B. Farrell, D.S. Albin, E. Colegrove, M. O. Reese, J. N. Duenow, D. Kuciauskas, W. K. Metzger, Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe, Apl. Materials, 4, 116102 (2016); https://doi.org/10.1063/1.4966209.

J. M. Burst, J. N. Duenow, A. Kanevce, H. R. Moutinho, C. S. Jiang, M. M. Al-Jassim, M. O. Reese, D. S. Albin, J. A. Aguiar, E. Colegrove, T. Ablekim, S. K. Swain, K. G. Lynn, D. Kuciauskas, T. M. Barnes, W. K. Metzger, Interface characterization of single crystal CdTe solar cells with VOC > 950 mV, IEEE Journal of Photovoltaics, 6(6), 1650 (2016); https://doi.org/10.1109/JPHOTOV.2016.2598274.

M. A. Flores, W. Orellana, E. Menendez-Proupin, Self-compensation in phosphorus-doped CdTe, Physical Review. B 96, 134115 (2017); https://doi.org/10.1103/PhysRevB.96.134115.

F. A. Kröger, The Chemistry of Imperfect Solids (North-Holland/Interscience, Amsterdam/New York, 1964).

P. Fochuk, R. Grill, I. Nakonechnyi, O. Kopach, O. Panchuk, Ye. Verzhak, E. Belas, A. E. Bolotnikov, G. Yang, R. B. James, Point Defects in Cd0.9Zn0.1Te:In Single Crystals, IEEE. Trans. Nucl. Sci., 58(5), 2346 (2011); https://doi.org/10.1109/TNS.2011.2164580.

V. P. Zayachkivsky, M. A. Kovalets, N. I. Kuchma, N. I. Trotsyuk, I. A. Plysyuk, Obtaining ohmic contacts to p-CdTe samples, Instruments and technique of experiment, 5, 211 (1984).

I. Turkevych, R. Grill, J. Franc, E. Belas, P. Höschl, P. Moravec, High-temperature electron and hole mobility in CdTe, Semicond. Sci. Technol., 17, 1064 (2002); https://doi.org/10.1088/0268-1242/17/10/305.