LUO B, YANG F, YAN L. Key technologies and research development of CMOS image sensors[C]//2010 Second IITA International Conference on Geoscience and Remote Sensing, August 28–31, 2010, Qingdao, China. New York: IEEE, 2010, 1: 322–325.

Google Scholar 

SAKANO Y, TOYOSHIMA T, NAKAMURA R, et al. A 132 dB single-exposure-dynamic-range CMOS image sensor with high temperature tolerance[C]//2020 IEEE International Solid-State Circuits Conference (ISSCC), February 16–20, 2020, San Francisco, CA, USA. New York: IEEE, 2020: 106–108.

Google Scholar 

VELICHKO S, JASINSKI D, GUIDASH M, et al. Automotive 3 µm HDR image sensor with LFM and distance functionality[J]. IEEE transactions on electron devices, 2022, 69(6): 2951–2956.

Article  ADS  Google Scholar 

SOLHUSVIK J, HU S, JOHANSSON R, et al. A 1392×976 2.8 µm 120 dB CIS with per-pixel controlled conversion gain[C]//2017 International Image Sensor Workshop (IISW), May 30–June 2, 2017, Hiroshima, Japan. Sunnyvale: IISW, 2017: 298–301.

Google Scholar 

OH Y, KIM M, CHOI W, et al. A 0.8 µm nonacell for 108 megapixels CMOS image sensor with FD-shared dual conversion gain and 18,000e-full-well capacitance[C]//2020 IEEE International Electron Devices Meeting (IEDM), December 12–18, 2020, San Francisco, CA, USA. New York: IEEE, 2020: 16.2.1–16.2.4.

Google Scholar 

SEO M W, KAWAHITO S, KAGAWA K, et al. A 0.27e-RMS read noise 220-µV/e-conversion gain reset-gate-less CMOS image sensor with 0.11-µm CIS process[J]. IEEE electron device letters, 2015, 36(12): 1344–1347.

Article  ADS  Google Scholar 

SATO M, YORIKADO Y, MATSUMURA Y, et al. A 0.50e-RMS noise 1.45 µm-pitch CMOS image sensor with reference-shared in-pixel differential amplifier at 8.3 Mpixel 35 fps[C]//2020 IEEE International Solid-State Circuits Conference (ISSCC), February 16–20, 2020, San Francisco, CA, USA. New York: IEEE, 2020: 108–110.

Google Scholar 

XU J, SHU L, GAO Z, et al. Analysis and parameter optimization of high dynamic range pixels for split photodiode in CMOS image sensors[J]. IEEE sensors journal, 2022, 22(7): 6748–6754.

Article  ADS  Google Scholar 

FUJIHARA Y, MURATA M, NAKAYAMA S, et al. An over 120 dB single exposure wide dynamic range CMOS image sensor with two-stage lateral overflow integration capacitor[J]. IEEE transactions on electron devices, 2021, 68(1): 152–157.

Article  ADS  Google Scholar 

SHIKE H, KURODA R, KOBAYASHI R, et al. A global shutter wide dynamic range soft X-ray CMOS image sensor with backside-illuminated pinned photodiode, two-stage lateral overflow integration capacitor, and voltage domain memory bank[J]. IEEE transactions on electron devices, 2021, 68(4): 2056–2063.

Article  ADS  Google Scholar 

TAKASE M, ISONO S, TOMEKAWA Y, et al. An over 120 dB wide-dynamic-range 3.0 µm pixel image sensor with in-pixel capacitor of 41.7 fF/µm2 and high reliability enabled by BEOL 3D capacitor process[C]//2018 IEEE Symposium on VLSI Technology, June 18–22, 2018, Honolulu, HI, USA. New York: IEEE, 2018: 71–72.

Google Scholar 

OIKAWA T, KURODA R, TAKAHASHI K, et al. A 70-dB SNR high-speed global shutter CMOS image sensor for in situ fluid concentration distribution measurements[J]. IEEE transactions on electron devices, 2022, 69(6): 2965–2972.

Article  ADS  Google Scholar 

MURATA M, KURODA R, FUJIHARA Y, et al. A high near-infrared sensitivity over 70-dB SNR CMOS image sensor with lateral overflow integration trench capacitor[J]. IEEE transactions on electron devices, 2020, 67(4): 1653–1659.

Article  ADS  Google Scholar 

AKAHANE N, SUGAWA S, ADACHI S, et al. A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor[J]. IEEE journal of solid-state circuits, 2006, 41(4): 851–858.

Article  ADS  Google Scholar 

LE-THAI H, XHAKONI A, GIELEN G. A column-and-row-parallel CMOS image sensor with thermal and 1/f noise suppression techniques[C]//ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, September 12–15, 2016, Lausanne, Switzerland. New York: IEEE, 2016: 221–224.

Google Scholar 

TAKAYANAGI I, MIYAUCHI K, OKURA S, et al. A 120-ke-full-well capacity 160-µV/e-conversion gain 2.8-µm backside-illuminated pixel with a lateral overflow integration capacitor[J]. Sensors, 2019, 19(24): 5572.

Article  ADS  Google Scholar